Modification of thin films induced by slow heavy ions analysed with PIXE and SRIM
نویسندگان
چکیده
منابع مشابه
architecture and engineering of nanoscale sculptured thin films and determination of their properties
چکیده ندارد.
15 صفحه اولProcessing of nano-holes and pores on SiO2 thin films by MeV heavy ions
Scanned beams of 0.1 MeV/u Au ions were employed for the bombardment of silicon oxide films thermally grown on silicon (1 0 0) substrates. Subsequently the films were etched in aqueous HF solution (1% and 4%) for various times and at different temperatures. Scanning force microscopy and transmission electron microscopy images of etched films reveal conical holes with diameters from 20 to 350 nm...
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We have utilized several processing techniques to locally modify the superconducting transition temperature and the normal state resistivity of aluminum thin films. The techniques of ion implantation, application of a magnetic overlayer, and reactive ion etching have been used to fabricate S-N interfaces with controlled differences in transition temperatures and normal state resistances. Lithog...
متن کاملStructural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
متن کاملStructural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
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ژورنال
عنوان ژورنال: The European Physical Journal D
سال: 2015
ISSN: 1434-6060,1434-6079
DOI: 10.1140/epjd/e2015-50629-3